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Reflective Photosensors (Photo Reflectors)
CNB2001
Reflective Photosensor
Overview
CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor in a single resin package.
1
4.30.3 2.7 0.35
Unit : mm
3.4 1.8 3 C0.5 Chip center 0.15 0.05+0.1 -0.05
Features
Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 x 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used High current-transfer ratio
,,,, ,,
*1
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 IC VCEO VECO PC
*2
Unit V mA mW mA V V mW C C
6 50 75 30 35 6 75 -25 to +85
(Note) Tolerance unless otherwise specified is 0.2
Topr
Tstg -40 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC*1 IF = 20mA VR = 3V VCE = 10V VCC = 2V, IF = 4mA, RL = 100, d = 1mm VCC = 2V, IF = 4mA, RL = 100 IF = 4mA, IC = 0.5mA VCC = 2V, IC = 10mA, RL = 100 120 115 0.52 Conditions min typ 1.2 max 1.4 10 1.0 15.0 5.0 1.2 Unit V A A mA A V s
Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2
*1
Output Current (IC) measurement method (see figure below.)
*2
Response time measurement circuit (see figure below.) Color indication of classifications
tr : Rise time tf : Fall time Glass plate Evaporated Al d = 1mm Sig.IN
Glass plate Evaporated Al d = 1mm
IF
,,
,,, ,, ,
RL
IC VCC
Sig.IN 50
RL
Sig. VCC OUT
Sig.OUT tr tf
90% 10%
Input and output are handled electrically. This product is not designed to withstand radiation.
,, ,,
1.5 23 4 Pin connection Color of rank 1: Anode 2: Cathode 3: Emitter 4: Collector 1
2 4-0.7
4 4-0.5
0.85
, ,,, ,,, ,,,
, ,,, ,,, ,,,
Class Q R S
IC (A) 0.52 to 1.94 1.45 to 5.4 4.0 to 15.0
Color Orange White Light blue
1
CNB2001
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- VF
10 3 Ta = 25C
IC -- IF
VCC = 5V Ta = 25C d = 1mm RL = 100
IF , IC (mA)
50
IF
50
IC (mA) Collector current
Forward current, collector current
40 IC
IF (mA)
10 2
40
Forward current
30
30
10
20
20
1
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10 -1
1
10
10 2
10 3
Ambient temperature Ta (C )
Forward voltage VF (V)
Forward current IF (mA)
VF -- Ta
1.6 10 2
IC -- VCE
Ta = 25C d = 1mm IF = 10mA 4mA 2mA 1mA 160
IC -- Ta
VCC = 2V IF = 4mA RL = 100 120
IC (mA)
VF (V)
1.2 10mA 1mA 0.8
10
1
Relative output current
10 2
Forward voltage
Collector current
IC (%)
IF = 50mA
80
0.4
10 -1
40
0 - 40 - 20
0
20
40
60
80
100
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 3 VCE = 10V 10 5
tr , tf -- IC
100 VCC = 2V Ta = 25C : tr : tf 10 4
IC -- d
VCC = 2V Ta = 25C IF = 4mA
80
10
Relative output current
60
Rise time , fall time
Dark current
10 3
RL = 1k 500 100
1
40
10 2
10 -1
20
10 -2 - 40 - 20
0
20
40
60
80
100
10 10 -2
10 -1
1
10
0
0
2
Ambient temperature Ta (C )
Collector current IC (mA)
Distance d (mm)
2
, ,
d 4 6 8 10
ICEO (A)
tr , tf (s)
10 2
IC (%)

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